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UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772ANL APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE *Pb-free plating product number: 2SD882ANLK ABSOLUTE MAXIMUM RATINGS (Ta=25C ) PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Ic IB Tj TSTG RATINGS 40 30 5 1 3 7 0.6 150 -55 ~ +150 UNIT V V V W A A A C C ELECTRICAL CHARACTERISTICS (Ta=25C,unless otherwise specified) PARAMETER Collector cut-off current Emitter cut-off current DC current gain(note 1) SYMBOL TEST CONDITIONS VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz MIN TYP MAX 1000 1000 UNIT nA nA ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Current gain bandwidth product fT Output capacitance Cob Note 1:Pulse test:PW<300s,Duty Cycle<2% 30 100 200 150 0.3 1.0 80 45 400 0.5 2.0 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R211-016,B UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE Q 100-200 P 160-320 E 200-400 TYPICAL PARAMETERS PERFORMANCE Fig.1 Static characteristics 150 Fig.2 Derating curve of safe operating areas 12 Fig.3 Power Derating Collector current, Ic (A) 1.6 1.2 100 Power Dissipation (W) 150 200 Ic Derating (%) IB=9mA IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA S/ 8 bl 0.8 im ite d Di n tio ip a ss 50 4 d it e lim 0.4 IB=2mA IB=1mA 0 0 4 8 12 16 20 -50 0 50 0 0 100 -50 0 50 100 150 200 Collector-Emitter voltage (V) Case Temperature, Tc () Case Temperature,Tc () Fig.4 Collector Output capacitance 10 3 10 3 Fig.5 Current gainbandwidth product 1 10 Fig.6 Safe operating area Ic(max),Pulse Ic(max),DC 10 mS 1m S 1m 0. S Current gainbandwidth product, FT (MHz) Output Capacitance (pF) 10 2 IE=0 f=1MHz Collector current, Ic (A) 0 1 10 VCE=5V 10 2 10 0 IB=8mA 10 1 10 1 -1 10 10 0 10 0 -1 10 10 -2 -3 10 10 0 10 -2 -1 10 10 10 -2 10 0 1 10 2 10 Collector-Base Voltage (v) Collector current, Ic (A) Collector-Emitter Voltage Fig.7 DC current gain 10 3 10 4 Fig.8 Saturation Voltage VCE=2V Saturation Voltage (mV) DC current Gain, HFE 10 3 VBE(sat) 10 2 10 2 10 1 VCE(sat) 10 1 10 0 0 10 10 1 10 2 10 3 10 4 10 0 0 10 10 1 10 2 10 3 10 4 Collector current, Ic (mA) Collector current, Ic (mA) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-016,B UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R211-016,B |
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